Advanced Multilayer Amorphous Silicon Thin-Film Transistor Structure: Film Thickness Effect on Its Electrical Performance and Contact Resistance
نویسندگان
چکیده
We report the intrinsic and extrinsic electrical characteristics of advanced multilayer amorphous silicon (a-Si:H) thin-film transistor (TFT) with dual amorphous silicon nitride (a-SiNX:H) and a-Si:H layers. The thickness effect of the high electronic quality a-Si:H film on the transistor’s electrical property was investigated; with increasing film thickness, both field-effect mobility and subthreshold swing show improvement and the threshold voltage remain unchanged. However, the contact resistance increases with the a-Si:H film thickness. Using the two-step plasma enhanced chemical vapor deposition process, we fabricated TFT’s with acceptable field-effect mobility ( 1 cm V 1 s ) and threshold voltage (<1:5V) with enhanced throughput. [DOI: 10.1143/JJAP.47.3362]
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